Explanation of reverse short channel effect by defect gradients
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Transient phosphorus diffusion from silicon and argon implantation damageApplied Physics Letters, 1993
- Transient Phosphorus Diffusion Below the Amorphization ThresholdJournal of the Electrochemical Society, 1991
- Guidelines for reverse short-channel behaviorIEEE Electron Device Letters, 1989
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- Anomalous transient diffusion of ion implanted dopants: A phenomenological modelNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989