AN INDUSTRIAL PROCESS FOR BPSG-TEOS

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Abstract
Boron and Phosphorus doped silicon oxide films (BPSG) were grown using Tetraethylorthosilicate (TEOS), PH3, O2 and Trimethylborate (TMB). The catalytic decomposition of TEOS by PH3 and O2 is attributed to surface controlled reactions related to the presence of P2O5 at the film surface. The influence of PH3 flow, temperature, pressure and TEOS flow is described for a process with a physical load of 135 150 mm wafers. The method of TMB injection is discussed. The results achieved are a deposition rate of 110 Å/min and uniformities of ± 4 % for a film composition of 4 ± 0.3 wt% P and 3.5 ± 0.3 wt% B

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