Ring oscillators with optical and electrical readoutbased on hybridGaAs MQW modulators bonded to 0.8 µm silicon VLSI circuits
- 26 October 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (22) , 1917-1918
- https://doi.org/10.1049/el:19951342
Abstract
Loaded and unloaded ring-oscillator circuits with an electrical and surface-normal 850 nm optical readout are fabricated using a hybrid 0.8 µm silicon-CMOS/GaAs-AlGaAs MQW process. Measurements of the oscillation frequency of these circuits show total capacitance associated with the flip-chip-bonded optical MQW modulators as low as 52 fF.Keywords
This publication has 3 references indexed in Scilit:
- 3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuitIEEE Photonics Technology Letters, 1995
- GaAs MQW modulators integrated with silicon CMOSIEEE Photonics Technology Letters, 1995
- Ring oscillators with monolithically integrated-optical readout based on GaAs-AlGaAs FET-SEED technologyIEEE Electron Device Letters, 1995