High conductivity ZnSe films
- 1 April 1978
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (4) , 2584-2585
- https://doi.org/10.1063/1.325074
Abstract
Thin films of ZnSe deposited by vacuum evaporation have a high resistivity (≳5×108 Ω cm), even when donor impurities such as Ga or In and additional Zn are coevaporated. High-conductivity films of ZnSe were produced by annealing films, deposited with coevaporated Ga and Zn, in Zn vapor at 500 °C. Film resistivities in the range 0.5–40 Ω cm were obtained in this way, corresponding to degenerate n-type material with electron densities in the 1019-cm−3 range. Heterojunctions of n-ZnSe/p-CdTe and n-ZnSe/p-GaAs were investigated.This publication has 7 references indexed in Scilit:
- Evaluation of the CdS/CdTe heterojunction solar cellJournal of Applied Physics, 1977
- Photovoltaic properties of five II-VI heterojunctionsJournal of Applied Physics, 1977
- Photovoltaic energy conversion with n-CdS—p-CdTe heterojunctions and other II-VI junctionsIEEE Transactions on Electron Devices, 1977
- The electrical properties of zinc selenideJournal of Physics D: Applied Physics, 1976
- Diffusion of Aluminum in the ZnSe–ZnTe SystemJournal of Applied Physics, 1970
- Electrically Conducting Photoluminescent ZnSe FilmsJournal of the Electrochemical Society, 1969
- PURIFICATION OF II–VI COMPOUNDS BY SOLVENT EXTRACTIONApplied Physics Letters, 1962