The dry etching of group III-nitride wide-bandgap semiconductors

• 1 August 1996
• journal article
• semiconductor
• Published by Springer Nature in JOM
• Vol. 48  (8) , 50-55
• https://doi.org/10.1007/bf03223028

Abstract

Keywords

• ACTIVE LAYER
• ETCH RATE
• VERTICAL SIDEWALL
• ETCH PROFILE
• ELECTRON CYCLOTRON RESO