Room-temperature operation of Ga 0.47 In 0.53 As/AI 0.48 In 0.52 As resonant tunnelling diodes

Publisher Website
Google Scholar
Abstract
The first room-temperature operation of Ga0.47In0.53As/Al0.48In0.52As resonant tunnelling (RT) diodes is reported. The peak/valley ratio of the current is as high as 4:1 at room temperature and is 15:1 at 80 K. These are the highest values of peak/valley ratio at the respective temperatures, reported so far, in this material system. The position of the peak in the current/voltage characteristic also showed good agreement with that obtained from an electron tunnelling transmission calculation.