Simulation of Charge Collection in a Multilayer Device

1 January 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 32 (6) , 4140-4144
https://doi.org/10.1109/tns.1985.4334082

Abstract

Charge collection transients following a strike by an ionizing particle are computed for a multilayer N+PNN+ device at two different bias points. The results are consistent with experimental observations. Details of the current paths within the device are also shown and indicate that field funneling concepts do not directly apply to this structure.

Keywords

NONHOMOGENEOUS MEDIA
COMPUTATIONAL MODELING
GALLIUM ARSENIDE
IONIZATION
SEMICONDUCTOR DIODES
ANALYTICAL MODELS
DISTRIBUTED COMPUTING
DOPING
SEMICONDUCTOR DEVICES
PARTICLE TRACKING

This publication has 0 references indexed in Scilit: