X-ray topography of growth step sources in LPE gallium arsenide
- 1 November 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 50 (3) , 771-773
- https://doi.org/10.1016/0022-0248(80)90027-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Substrate orientation and surface morphology of GaAs liquid phase epitaxial layersJournal of Crystal Growth, 1974
- Notizen: Über die Abbildungen von Versetzungen durch Abdampfstrukturen auf NaCl-KristallenZeitschrift für Naturforschung A, 1960
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951
- The influence of dislocations on crystal growthDiscussions of the Faraday Society, 1949