High temperature annealings of Sb and Sb/B heavily implanted silicon wafers studied by near grazing incidence fluorescence EXAFS
- 1 March 1995
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 208-209, 474-476
- https://doi.org/10.1016/0921-4526(94)00729-f
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- X-ray absorption study of the atomic environment in Sb+ and Sb+/B+ implanted siliconApplied Physics Letters, 1992
- The nature of electrically inactive antimony in siliconJournal of Applied Physics, 1986
- A rapid, exact curved-wave theory for EXAFS calculationsJournal of Physics C: Solid State Physics, 1984