New and Simple MOCVD Technique Using Completely Gaseous MO-Sources Especially Useful for Growing Zn-Chalcogenide Films

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Abstract
A Simple and inexpensive MOCVD technique using completely gaseous MO-sources especially useful for growing Zn-chalcogenide and -oxide films is proposed. It is shown that the flow rate of MO-source material can be controlled more accurately and simply by this technique than in a conventional MOCVD technique using a bubbling-cylinder for MO-source. Its application for growing ZnS and ZnSe films is also shown. High-quality and low-resistivity ZnSe films are grown on GaAs substrates without intentional doping using this technique and show a strong blue near-band-edge photoluminescent peak.

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