Salicides for 0.10 /spl mu/m gate lengths: a comparative study of one-step RTP Ti with Mo doping, Ti with pre-amorphization and Co process
- 1 January 1997
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantationApplied Physics Letters, 1995