Comment on ‘‘Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition’’ [Appl. Phys. Lett. 49, 450 (1986)]
- 25 May 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (21) , 1533
- https://doi.org/10.1063/1.97822