Residual shallow acceptors in GaAs layers grown by metal-organic vapor phase epitaxy
- 1 September 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9) , 5350-5357
- https://doi.org/10.1063/1.332712
Abstract
A study of the residual impurities present in GaAs layers grown by metal-organic vapor phase epitaxy has been conducted. Gallium arsenide layers were grown from three different trimethylgallium sources as a function of the substrate temperature and the arsine partial pressure which are the main factors controlling the concentration of residual impurities. A study of the low temperature photoluminescence spectra of the layers supported by preliminary secondary ion mass spectroscopy measurements shows that the major residual acceptors are carbon, magnesium, and zinc.This publication has 19 references indexed in Scilit:
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