Processing and electrical properties of Pb (ZrxTi1−x)O3 (x=0.2–0.75) films: Comparison of metallo-organic decomposition and sol-gel processes

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Abstract
The deposition of thin Pb(Zr x Ti1−x )O3films by sol‐gel and by metallo‐organic decomposition (MOD) processes has been studied. Powders obtained from different precursor solutions were analyzed with respect to their decomposition and crystallization. Using a spin‐coating technique, Pb(Zr x Ti1−x )O3films with zirconium concentrations ranging from x=0.2 to 0.75 have been deposited on Pt‐electroded Si wafers. The lattice constants of the perovskite films and their dielectric and ferroelectric properties (permittivity, remanent polarization, coercive field strength) have been measured as a function of the zirconium concentration. The results are compared to the data obtained on bulk ceramics. For Pb(Zr x Ti1−x )O3films with a composition located at the morphotropic phase boundary (x≊0.53) the influence of the processing and the lead excess of the starting solutions on the film properties was examined. First measurements on the resistance degradation of thin Pb(Zr0.53Ti47)O3films deposited by the MOD process are reported.