Valley-orbit interaction and effective-mass theory for indirect gap semiconductors
- 28 December 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (24) , L695-L698
- https://doi.org/10.1088/0022-3719/10/24/004
Abstract
It is shown that in the absence of core repulsion and intervalley kinetic energy, the intervalley coulomb scattering leads to instability of the effective-mass donor state in silicon. In this material, overlap of Bloch functions from different valleys is essential to reduce the intervalley scattering below a threshold for instability.Keywords
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