Microscopic modelling of perpendicular electronic transport in doped multiple quantum wells

Preprint

15 October 1996

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9610120

Abstract

We present a microscopic calculation of transport in strongly doped superlattices where domain formation is likely to occur. Our theoretical method is based on a current formula involving the spectral functions of the system, and thus allows, in principle, a systematic investigation of various interaction mechanisms. Taking into account impurity scattering and optical phonons we obtain a good quantitative agreement with existing experimental data from Helgesen and Finstad (J. Appl. Phys. 69, 2689, (1991)). Furthermore the calculated spectral functions indicate a significant increase of the average intersubband spacing compared to the bare level differences which might explain the experimental trend.

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All Related Versions

Version 1, 1996-10-15, ArXiv
Published version: Physica Scripta, T69 (T69), 321.

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