Stress in polycrystalline and amorphous silicon thin films
- 1 August 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (8) , 4674-4675
- https://doi.org/10.1063/1.332628
Abstract
Stress in polycrystalline and amorphous silicon thin films deposited on oxidized silicon wafers is determined from the lengthening of the undercut edge of a silicon stripe. The technique measures only compressive stresses, has a stress resolution of 108 dyn/cm2, and a spatial resolution on the wafer of 250 μm. Unannealed silicon thin films deposited on oxide are under high compressive stress (1010 dyn/cm2). This stress is reduced below the resolution by annealing at 1100 °C for 20 min in N2, except for the thinnest polycrystalline silicon films studied (230 nm thick).This publication has 5 references indexed in Scilit:
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