A spectroscopic study of Na+ -bound electrons at Si-SiO2 interfaces
- 1 January 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 113 (1-3) , 144-147
- https://doi.org/10.1016/0039-6028(82)90576-3
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Theory of impurity-induced infrared absorption in inversion layersSurface Science, 1982
- Cyclotron resonance at Na+ doped Si-SiO2 interfacesSolid State Communications, 1981
- Impurity bands in inversion layersPhilosophical Magazine Part B, 1980
- Oxide-Charge-Induced Impurity Level in Silicon Inversion LayersPhysical Review Letters, 1975