Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC

• 1 February 1998
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 264-268, 557-560
• https://doi.org/10.4028/www.scientific.net/msf.264-268.557

Abstract

Keywords

• ADMITTANCE SPECTROSCOPY
• GALLIUM ACCEPTOR
• HALL-EFFECT
• ION IMPLANTATION