Growth and properties of an LiNbO ₃ film on sapphire with an LiNbO ₃ buffer layer

19 November 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (24) , 1321-1323
https://doi.org/10.1049/el:19870914

Abstract

A lithium niobate (LiNbO₃) epitaxial film has been grown by magnetron RF sputtering. It was grown on a sapphire substrate with a predeposited and annealed LiNbO₃ buffer layer. The effects of a buffer layer on growth-film properties were studied by physical analysis, including X-ray diffraction, reflection high-energy electron diffraction and scanning electron microscopy.

Keywords

RHEED
ANNEALED LINBO3 BUFFER LAYER
EPITAXIAL FILM
X-RAY DIFFRACTION
REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION
GROWTH-FILM PROPERTIES
SAPPHIRE SUBSTRATE
MAGNETRON RF SPUTTERING
SEM
AL2O3 SUBSTRATE
FILM GROWTH
SCANNING ELECTRON MICROSCOPY
PHYSICAL ANALYSIS
LINBO3 FILMS

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Growth and properties of an LiNbO 3 film on sapphire with an LiNbO 3 buffer layer

Abstract

Keywords

Growth and properties of an LiNbO ₃ film on sapphire with an LiNbO ₃ buffer layer