Synchrotron-radiation-induced deposition of boron and boron carbide films from boranes and carboranes: Decaborane
- 1 April 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (7) , 4103-4109
- https://doi.org/10.1063/1.348422
Abstract
Boron has been deposited successfully on Si(111) from the synchrotron‐radiation‐induced decomposition of decaborane (14), i.e., B10H14. The rate of deposition is limited by the adsorption rate of decaborane (14) on the surface. In addition there is some indication that there is an activation barrier to dissociative adsorption. The synchrotron‐radiation‐ induced growth rate of boron thin films from decaborane (14) is linear with coverage for a large range of thickness, suggesting a constant sticking coefficient for decaborane adsorption at room temperature.This publication has 46 references indexed in Scilit:
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