High performance very large scale integrated photomask with a silicide film
- 1 July 1986
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 4 (4) , 841-844
- https://doi.org/10.1116/1.583523
Abstract
A molybdenum silicide (Mo-silicide) film deposited on a quartz glass substrate offers major advantages as a high performance photomask material for very large scale integrated (VLSI) fabrication. There is no pattern missing due to exfoliation after ultrasonic cleaning with frequency of 28 kHz and 300 W of power, and after being scrubbed over 10 cycles with a high pressure water jet. Reflectivity and optical density of the Mo-silicide film are not affected by acidic chemicals. Moreover, dry etching can be done at a rate of 50 nm/min; more than five times as fast as etching of a chromium (Cr) mask.This publication has 0 references indexed in Scilit: