Photoluminescence measurement of ion-etched GaAs surface

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Abstract
The effects of ion etching and annealing of GaAs were studied by observing photoluminescence, reflectance, and electron diffraction patterns. The (100) surfaces of GaAs were rf sputter etched. The intensity of the edge emission decreased to about 1/15 of the initial value in the case of a Si-doped sample when excited by a He–Cd laser (3250 Å) at 10 K. The depth of the damaged layer is deduced to exceed the bombarding ion range. Annealing increased the edge emission intensity up to the temperature of 450 °C, above which edge emission decreased due to thermal dissociation. On the other hand, electron diffraction patterns and reflection spectra showed continuous recovering of lattice ordering above the annealing temperature of 450 °C.

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