A cross-sectional atomic force microscopy study of nanocrystalline Ge precipitates in SiO2 formed from metastable Si1−xGexO2
- 15 August 1997
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (4) , 1626-1631
- https://doi.org/10.1063/1.365962
Abstract
In recent years, many investigators have reported visible photoluminescence from structures that consist of Ge or Si nanocrystals embedded in a SiO 2 matrix deposited or grown on various substrates. We have developed a rapid technique for studying the through-thickness microstructure of this class of materials via atomic force microscopy(AFM) and, using this technique, we report on the precipitation and growth of Ge crystallites formed via a two-step process of hydrothermal oxidation of Si 1−x Ge x O 2 ( x =0.15) at 450–500 °C and subsequent chemical reduction in forming gas (85/15: N 2 /H 2 ; 800 °C). The Ge-particle distributions obtained with this AFM cross-sectional technique are consistent with those previously reported using other techniques. The utility of cross-sectional AFM for the evaluation of nanoscale features in the thickness of a thin film is evaluated.This publication has 21 references indexed in Scilit:
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