Lattice-matched and strained InGaAs solar cells for thermophotovoltaic use
- 1 January 1996
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 358 (1) , 375-386
- https://doi.org/10.1063/1.49699
Abstract
Lattice‐matched and strained indium gallium arsenide solar cells can be used effectively and efficiently for thermophotovoltaic applications. A 0.75 eV bandgap InGaAs solar cell is well matched to a 2000 K blackbody source with a emission peak around 1.5 μm. A 0.60 eV bandgap InGaAs cell is well suited to a Ho‐YAG selective emitter and a blackbody at 1500 K which have emission peak around 2.0 μm. Modeling results predict that the cell efficiencies in excess of 30% are possible for the 1500 K Ho‐YAG selective emitter (with strained InGaAs) and for the 2000 K blackbody (with lattice‐matched InGaAs) sources.Keywords
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