Frequency response of an internal amplifier in a high-speed integrated circuit measured by electro-optic sampling

21 January 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (2) , 106-107
https://doi.org/10.1049/el:19880070

Abstract

The frequency response of an FET amplifier within a highspeed GaAs integrated circuit has been measured directly using ultrashort optical pulses from a gain-switched GalnAsP injection laser and the electro-optic sampling technique. The 3dB bandwidth for the FET amplifier is 4–4.5 GHz.

Keywords

GAIN-SWITCHED GAINASP INJECTION LASER
FREQUENCY RESPONSE
ELECTRO-OPTIC SAMPLING TECHNIQUE
SEMICONDUCTORS
ELECTRO-OPTIC SAMPLING
FET AMPLIFIER
ULTRASHORT OPTICAL PULSES
INTERNAL AMPLIFIER
GAINASP LASER
GAAS INTEGRATED CIRCUIT
4 TO 4.5 GHZ

This publication has 0 references indexed in Scilit: