InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristics
- 26 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (13) , 1222-1224
- https://doi.org/10.1063/1.102521
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxyApplied Physics Letters, 1989
- Reproducible growth of low-threshold single and multiple quantum well InGaAs/InP lasers by a novel interlayer growth techniqueApplied Physics Letters, 1989
- High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser DiodesJapanese Journal of Applied Physics, 1989
- Ultralow-threshold graded-index separate-confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatingsApplied Physics Letters, 1987
- Second quantized state lasing of a current pumped single quantum well laserApplied Physics Letters, 1986
- Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasersElectronics Letters, 1986
- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985
- Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μmApplied Physics Letters, 1984
- 1.5–1.6-μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1983
- Current injection GaAs-AlxGa1−xAs multi-quantum-well heterostructure lasers prepared by molecular beam epitaxyApplied Physics Letters, 1979