The Heat-Treatment of Anodic Oxide Films on Tantalum

Abstract
Dielectric measurements have been made on tantalum which has been anodically oxidized in aqueous phosphoric acid of various concentrations and then heated in air. The resulting dielectric consists of a highly conducting portion adjacent to the tantalum and an outer, nonconducting portion. This structure is interpreted in terms of the distribution of phosphorus incorporated into the oxide and its effect on the diffusion of oxygen during heat‐treatment.

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