e −-beam deposition of In2O3 stabilized ZrO2 films

Abstract
Films of ZrO2-In2O3 were deposited by coevaporating ZrO2 and In2O3 using electron beam deposition techniques. During the deposition, the substrate was heated to 300-degrees-C. Postdeposition x-ray diffraction analyses showed that as-deposited films containing an In2O3 mole fraction ranging between 3.5 and 11.0 were crystalline with the zirconia in the cubic phase.

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