HYDROGENATION STUDIES OF DEFORMED n-Si
- 1 September 1983
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 44 (C4) , C4-359
- https://doi.org/10.1051/jphyscol:1983443
Abstract
New results on hydrogenation of dislocated n-Si are presented. Hydrogen passivation depth was found to be more than 10 µmKeywords
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