High quality CeO2 film grown on Si(111) substrate by using low energy dual ion beam deposition technology
- 18 December 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (25) , 3724-3725
- https://doi.org/10.1063/1.115362
Abstract
By using the mass‐analyzed low energy dual ion beam deposition technique, a high quality epitaxial, insulating cerium dioxide thin film with a thickness of about 2000 Å has been grown on a silicon (111) substrate. The component species, cerium and oxygen, are homogeneous in depth, and have the correct stoichiometry for CeO2. X‐ray double‐crystal diffraction shows that the full width at half maximum of the (222) and (111) peaks of the film are less than 23 and 32 s, respectively, confirming that the film is a perfect single crystal.Keywords
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