Band‐Gap Narrowing in Semi‐Insulating GaAs

This publication has 18 references indexed in Scilit:

• On the determination of carrier mobilities and densities in semi-insulating GaAs
  Physica Status Solidi (a), 1983
• Band‐Gap Narrowing in n‐Type Moderately Doped Silicon at 300 K
  Physica Status Solidi (b), 1983
• Geometrical Magnetoresistance Effect in Semiconductors with Mixed Conductivity. Determination of the Electron Hall Mobility in Semi-Insulating GaAs
  Physica Status Solidi (a), 1983
• The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs
  Japanese Journal of Applied Physics, 1983
• Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method
  Japanese Journal of Applied Physics, 1983
• Electron scattering by localized defect potentials and by space-charge regions in semiconductors
  Physical Review B, 1983
• On the Relation between Electron and Hole Mobilities in Semi‐Insulating GaAs
  Physica Status Solidi (b), 1982
• The concept of screening length in lifetime and relaxation semiconductors
  Journal of Physics and Chemistry of Solids, 1980
• The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP
  Journal of the Electrochemical Society, 1975
• Electrical Properties ofn-Type Epitaxial GaAs at High Temperatures
  Physical Review B, 1972