High-sensitivity Hi-Lo germanium avalanche photodiode for 1.5 μm-wavelength optical communication

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Abstract
A high-sensitivity small-detectable-area Hi-Lo germanium avalanche photodiode (Ge APD) was developed for use in 1.55 μm wavelength optical communication systems. This device has Hi-Lo (p+nn−) impurity profile. Its detectable area is 30 μm in diameter for single-mode optical-fibre use. The minimum average received signal level obtained was −40.5 dBm (at 450 Mbit/s, λ = 1.55 μm, BER = 10−9, return-to-zero). This is 0.7 dB better than the value for the 80μm diameter similar structure Ge APD.

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