An Inversion Channel Technology For Opto-Electronic Integration
- 9 February 1989
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 0994, 251-258
- https://doi.org/10.1117/12.960136
Abstract
A new approach to optoelectronic integration is reported which combines electronic and optical devices fabricated with a common sequence and a single MBE wafer growth. The devices have in common, an inversion layer structure produced by charge sheet doping.Keywords
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