High-contrast reflection modulation at normal incidence in asymmetric multiple quantum well Fabry-Perot structure

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Abstract
We have modelled the properties of a multiple quantum well pin diode optical modulator with the natural semiconductor reflectivity (R ≈ 0.3) at its front surface and a high reflector (R ≈ 0.95), such as an integrated semiconductor quarterwave stack, at the back. By using resonant electroabsorption, rather than electrorefraction, our calculations show that it is possible to achieve contrast ratios of over 200, with less than 3dB insertion loss.