A unique approach to Ku-band power FETs

• 1 January 1980
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/iedm.1980.189766

Abstract

Keywords

• GAIN
• LITHOGRAPHY
• POWER ADDED EFFICIENCY
• GALLIUM ARSENIDE
• FREQUENCY
• POWER GENERATION
• CHIP
• CIRCUITS
• TEMPERATURE
• ELECTRODES