Precipitation of boron atoms implanted in silicon as detected by channeling analysis
- 1 July 1973
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (7) , 3372-3374
- https://doi.org/10.1063/1.1662769
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Depth distributions of defects and impurities in 100-keV B+ ion implanted siliconJournal of Applied Physics, 1973
- Excitation Curves forParticles fromBombarded with ProtonsPhysical Review B, 1953