Interdiffusion of CdS/CdTe in laser-deposited and RF sputtered alloys, bilayers and solar cells
- 1 January 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 921-924
- https://doi.org/10.1109/pvsc.1996.564279
Abstract
We have studied interdiffusion between CdS and CdTe in solar cells, bilayers, and in alloy films by Rutherford backscattering (RBS), Raman scattering, photoluminescence (PL), optical absorption and X-ray diffraction. The cells and films were fabricated by laser physical vapor deposition (LPVD) or by RF sputtering (RFS). We also have prepared films of the ternary alloy material (CdS/sub x/Te/sub 1-x/) by LPVD, related film composition to target composition by WDS, and obtained values for band bowing, lattice constant, phonon frequencies, and low temperature PL characteristics. The RBS spectra, obtained from thin bilayers of CdTe/CdS on fused silica, provide information on interdiffusion with /spl sim/200 /spl Aring/ depth resolution.Keywords
This publication has 1 reference indexed in Scilit:
- Optical Energy Gap of the Mixed Crystal CdSxTe1-xJapanese Journal of Applied Physics, 1973