Threshold properties of 1, 2 and 4 µm multilayer magneto-resistive memory cells
- 1 September 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 23 (5) , 2575-2577
- https://doi.org/10.1109/tmag.1987.1065598
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- 0.075, 1.25 and 2.0 μm wide M-R transducersJournal of Magnetism and Magnetic Materials, 1986
- Magnetoresistive switching of small permalloy sandwich structuresJournal of Applied Physics, 1984
- A Theoretical Model for Partial RotationJournal of Applied Physics, 1962