The influence of photoelectrons and flourescence radiation on resolution in x-ray lithography
- 31 December 1987
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 6 (1-4) , 221-226
- https://doi.org/10.1016/0167-9317(87)90041-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Resolution limits in x-ray lithography calculated by means of x-ray lithography simulator X M A SJournal of Vacuum Science & Technology B, 1986
- Monte Carlo modeling of the photo and Auger electron production in X-ray lithography with synchrotron radiationIEEE Transactions on Electron Devices, 1985
- Submicron pattern replication using a high contrast mask and two-layer resist in x-ray lithographyJournal of Vacuum Science & Technology B, 1984