Tin and zinc diffusion into gallium arsenide from doped silicon dioxide layers
- 30 June 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (6) , 619-624
- https://doi.org/10.1016/0038-1101(66)90005-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Double diffused gallium arsenide transistorsSolid-State Electronics, 1965
- Doped Anodic Oxide Films for Device Fabrication in SiliconJournal of the Electrochemical Society, 1965
- Anodic Oxide Films for Device Fabrication in SiliconJournal of the Electrochemical Society, 1964