Galvanomagnetic and thermopower studies in heavily compensated zinc selenide crystals
- 1 January 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (1) , 352-355
- https://doi.org/10.1063/1.325669
Abstract
The Hall coefficient, dc conductivity, and thermopower have been measured in three single crystals of zinc selenide heavily doped with indium to various degrees. It has been found that the excessive doping with indium leads to an increase of compensation with the increase of doping. The galvanomagnetic as well as thermopower measurements suggest impurity‐band conduction in the entire temperature region investigated (77–300 °K) in this material.This publication has 13 references indexed in Scilit:
- The electrical transport properties of a zinc selenide crystal highly annealed in molten zincPhysica Status Solidi (a), 1977
- The electrical properties of zinc selenideJournal of Physics D: Applied Physics, 1976
- The thermoelectric behaviour of disordered systemsPhilosophical Magazine, 1972
- Sign of the Hall Coefficient in a Relaxation-Case SemiconductorJournal of Applied Physics, 1971
- Hall conductivity of amorphous semiconductors in the random phase modelJournal of Non-Crystalline Solids, 1971
- Optical and electrical energy gaps in amorphous semiconductorsJournal of Non-Crystalline Solids, 1971
- Growth of ZnSe single crystals from the vapour phaseJournal of Crystal Growth, 1971
- Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductorsPhilosophical Magazine, 1970
- Observation of Anderson Localization in an Electron GasPhysical Review B, 1969
- Temporal Fluctuations of Moment in Paramagnets by Neutron DiffractionJournal of Applied Physics, 1968