Ion-Channelling Effects In Scanning Microscopy And Ion Beam Writing With A 60 keV Ga+ Probe
- 30 June 1982
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 158-162
- https://doi.org/10.1117/12.933428
Abstract
We describe the operation and functions of a scanning ion microscope. This has been shown capable of detecting ion-channelling phenomena in crystalline materials through the observation of crystallographic contrast in images obtained with the secondary electron and secondary ion signal. The instrument also provides on-line quantitative information on surface amorphization and on channelling effects in direct ion beam writing.Keywords
This publication has 0 references indexed in Scilit: