Tunneling Characteristics of NbN/NbN Josephson Junctions with Glow-Discharge-Produced Amorphous Silicon Barriers
- 1 August 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (8) , L587-590
- https://doi.org/10.1143/jjap.20.l587
Abstract
The tunneling characteristics have been systematically measured for NbN/NbN Josephson tunnel junctions with glow-discharge-produced amorphous silicon layers as tunneling barriers. Junction quality parameters, the junction capacitance and the maximum Josephson current density have been obtained as a function of the thickness of the amorphous silicon layer. It is shown that a significant improvement in tunneling characteristics can be achieved by using an amorphous silicon barrier.Keywords
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