Low-temperature growth of GexSi1−x/Si heterostructures on Si(100) by remote plasma-enhanced chemical vapor deposition
- 12 August 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (7) , 817-819
- https://doi.org/10.1063/1.105272
Abstract
Low‐temperature growth processes are needed in order to fully exploit the potential of GexSi1−x/Si heterostructures. Remote plasma‐enhanced chemical vapor deposition has been successful for silicon homoepitaxy at substrate temperatures as low as 150 °C. We report the growth of GexSi1−x/Si heterostructures with values of x between 0.07 and 0.73, and at substrate temperatures of 305 and 450 °C. The films grown at 450 °C have excellent crystallinity, low defect densities, and very abrupt interfaces, while films grown at 305 °C have degraded crystallinity.Keywords
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