Radiation damage of RbMgF3

Abstract
Radiation-induced defects in RbMgF3 have been studied by optical techniques. A tentative identification of the absorption and emission bands associated with these defects suggests the following optical bands occur when the defects designated below are present: (a) [X2] (Vk) centers—330-nm absorption and 428-nm emission, (b) F centers—295- and 325-nm absorption (depends on crystal orientation), (c) F3 centers—387-, 285-, and 230-nm absorption; 430-nm emission, and (d) F3 centers—300-nm absorption; and 330- and 490-nm emission. The temperature dependence of the production and annihilation of these defects is also investigated.

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