Vertical high mobility wrap-gated inas nanowire transistor
- 1 January 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 157-158
- https://doi.org/10.1109/drc.2005.1553100
Abstract
We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm2/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of Vg = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitudKeywords
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