X-band silicon TRAPATT diodes

1 January 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 58 (8) , 1285-1286
https://doi.org/10.1109/PROC.1970.7907

Abstract

Pulsed TRAPATT diodes have been successfully operated in X-band with 20 percent efficiency and 15 W output power. The diodes operate at the first subharmonic of the IMPATT frequency. Similar diodes have yielded 35 percent efficiency at 5.3 GHz as oscillators, and 54 percent efficiency at 3 GHz as RF triggered amplifiers.

Keywords

SILICON
DIODES
CIRCUIT TESTING
RADIO FREQUENCY
OSCILLATORS
HEAT SINKS
SOLID STATE CIRCUITS
DOPING PROFILES
COAXIAL COMPONENTS
POWER GENERATION