Geometry effects in MOSFET channel length extraction algorithms

1 April 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (4) , 186-188
https://doi.org/10.1109/EDL.1985.26091

Abstract

Several techniques have been proposed to determine the channel length and series resistance of MOSFET's. Numerical simulations show that these algorithms must carefully account for two-dimensional geometry effects in order to extract parameters which are physically meaningful. New techniques which take these effects into account are proposed for extracting the channel length and series resistance.

Keywords

GEOMETRY
MOSFET CIRCUITS
NUMERICAL SIMULATION
ELECTRIC RESISTANCE
ELECTRICAL RESISTANCE MEASUREMENT
LENGTH MEASUREMENT
FETS
VOLTAGE
DOPING
DISTORTION MEASUREMENT

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