Annealing Characteristics of Ultrathin Silicon Oxides Grown at Low Temperatures

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Abstract
Optical, mechanical, and electrical properties of ultrathin gate oxide grown at temperatures ≤700°C in dry have been studied as a function of annealing temperature in the range of 700°C to 1000°C. The effective refractive index of these films was found to decrease with increasing anneal temperature. Strong reduction in intrinsic film stress was observed at anneal temperatures over 900°C. Fixed charge densities, threshold voltages, and breakdown field strength are correlated with anneal temperatures. Fully processed poly‐Si gate MOS devices indicate that oxides grown at 700°C and annealed at 900°C are suitable for device applications, while maintaining the benefit of low thermal budget. Conventional in situ post‐oxidation anneal above 1000°C is not required, as all post‐gate thermal cycles provide adequate annealing.

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